k9f2g08x0b 256m x 8 bit nand flash 存储器芯片手册 -澳门皇冠贵宾会网址

k9f2g08x0b 256m x 8 bit nand flash 存储器芯片手册

使用该芯片的有：

myd-sam9g15 工控板/开发板/核心板

myd-sam9g25 工控板/开发板/核心板

myd-sam9g35 工控板/开发板/核心板

myd-sam9x25 工控板/开发板/核心板

myd-sam9x35 工控板/开发板/核心板

mys-sam9g15 工控板/单板机

mys-sam9g25 工控板/单板机

mys-sam9g35 工控板/单板机

mys-sam9x25 工控板/单板机

mys-sam9x35 工控板/单板机

features
• voltage supply
- 2.7v device(k9f2g08b0b): 2.50v ~ 2.90v
- 3.3v device(k9f2g08u0b): 2.70v ~ 3.60v
• organization
- memory cell array : (256m 8m) x 8bit
- data register : (2k 64) x 8bit
• automatic program and erase
- page program : (2k 64)byte
- block erase : (128k 4k)byte
• page read operation
- page size : (2k 64)byte
- random read : 25μs(max.)
- serial access : 25ns(min.)
256m x 8 bit nand flash memory
• fast write cycle time
- page program time : 200μs(typ.)
- block erase time : 1.5ms(typ.)
• command/address/data multiplexed i/o port
• hardware data protection
- program/erase lockout during power transitions
• reliable cmos floating-gate technology
-endurance : 100k program/erase cycles(with 1bit/512byte
ecc)
- data retention : 10 years
• command driven operation
• unique id for 澳门皇冠贵宾会网址 copyright protection
• package :
- k9f2g08x0b-pcb0/pib0 : pb-free package
48 - pin tsop i (12 x 20 / 0.5 mm pitch)